Atomic resolution imaging of light elements using low voltage Cs-corrected HAADF and ABF-STEM
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Abstract
Scanning transmission electron microscopy (STEM) offers techniques which may give structural and chemical information down to 0.1 nm of spatial resolution, which sub-angstrom resolution is achieved with a spherical aberration corrector. In the STEM, the electron probe is focused and scanned over the sample and the image is formed by measuring the electron signal arising after the electrons-specimen interactions. The scattered electron signals can be employed to obtain bright and dark field images. The STEM is a powerful instrument to understand the physical properties of nanostructures which requires the local structure and local chemistry to be determined at the atomic scale. Therefore STEM is a technique able to identify the position of atoms and atomic columns. In this work, the basic instrumental parameters before applications were evaluated. And also, experimental high angle annular dark field (HAADF)-STEM and annular bright field (ABF)-STEM images of LaAlO3 sample were obtained at low voltages and compared with simulated images obtained with the multislice method. Images simulated were found to agree well with experimental images.
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Mundo Nano. Revista Interdisciplinaria en Nanociencias y Nanotecnología por Universidad Nacional Autónoma de México se distribuye bajo una Licencia Creative Commons Atribución-NoComercial 4.0 Internacional.
Basada en una obra en http://www.mundonano.unam.mx.
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